型号 SI6463BDQ-T1-GE3
厂商 Vishay Siliconix
描述 MOSFET P-CH 20V 6.2A 8-TSSOP
SI6463BDQ-T1-GE3 PDF
代理商 SI6463BDQ-T1-GE3
产品目录绘图 DQ-T1-E3 Series 8-TSSOP
标准包装 1
FET 型 MOSFET P 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 20V
电流 - 连续漏极(Id) @ 25° C 6.2A
开态Rds(最大)@ Id, Vgs @ 25° C 15 毫欧 @ 7.4A,4.5V
Id 时的 Vgs(th)(最大) 800mV @ 250µA
闸电荷(Qg) @ Vgs 60nC @ 5V
功率 - 最大 1.05W
安装类型 表面贴装
封装/外壳 8-TSSOP(0.173",4.40mm 宽)
供应商设备封装 8-TSSOP
包装 剪切带 (CT)
产品目录页面 1665 (CN2011-ZH PDF)
其它名称 SI6463BDQ-T1-GE3CT
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